Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

ABSTRACT

There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.

TECHNICAL FIELD

The present technology relates to a solid-state imaging device, amanufacturing method of a solid-state imaging device, and an electronicapparatus, and particularly, relates to a solid-state imaging device ofa stacked structure, a manufacturing method of a solid-state imagingdevice of a stacked structure, and an electronic apparatus equipped witha solid-state imaging device of a stacked structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority PatentApplication JP 2014-087603 filed Apr. 21, 2014, and Japanese PriorityPatent Application JP 2014-129952 filed Jun. 25, 2014, the entirecontents of each of which are incorporated herein by reference.

BACKGROUND ART

In the past, in a case of manufacturing a solid-state imaging devicehaving an area greater than the exposure range of an exposure apparatus,the solid-state imaging device is divided into a plurality of regions,and separate exposure for exposing respective separated regions is used(for example, see PTL 1).

Further, in the past, in order to improve the aperture ratio of thesolid-state imaging device, a stacking technology has been used in whicha pixel circuit including a pixel array unit and a signal processingcircuit are respectively formed on different semiconductor substrates,and the two semiconductor substrates are stacked and electricallyconnected (for example, see PTL 2).

Then, for example, in a case of manufacturing a solid-state imagingdevice of a stacked structure having an area greater than the exposurerange of an exposure apparatus, separate exposure is performed onrespective semiconductor substrates.

CITATION LIST Patent Literature PTL 1: Japanese Patent No. 2902506 PTL2: Japanese Patent No. 4497844 SUMMARY OF INVENTION Technical Problem

However, in the separate exposure, different photomasks are used for theseparated regions or high-precision alignment is necessary in a portionconnecting the separated regions, and thus a manufacturing process iscomplicated and a manufacturing cost increases.

Thus, the present technology is made to be able to reduce themanufacturing cost of the solid-state imaging device.

Solution to Problem

A solid-state imaging device according to a first embodiment of thepresent technology includes a first substrate having a pixel circuitincluding a pixel array unit formed thereon and

a second substrate having a plurality of signal processing circuitsformed thereon, wherein the plurality of signal processing circuits arearranged adjacent to one another and include a spacing regiontherebetween, and

wherein the first substrate and the second substrate are stacked.

A manufacturing method of a solid state imaging device according to asecond embodiment of the present disclosure includes forming a pixelcircuit including a pixel array unit so as to be two-dimensionallyarranged through a scribe region on a first semiconductor substrate, byusing one or more separate exposures, forming a signal processingcircuit that processes a pixel signal of each pixel in the pixel arrayunit so as to be two-dimensionally arranged through a scribe region on asecond semiconductor substrate, by using a one-shot exposure;

stacking the first semiconductor substrate and the second semiconductorsubstrate such that the scribe region of the first semiconductorsubstrate overlaps the scribe region of the second semiconductorsubstrate, and cutting a semiconductor substrate including the firstsemiconductor substrate and the second semiconductor substrate that arestacked, along the scribe region of the first semiconductor substrate.

An electronic apparatus according to a third embodiment includes asolid-state imaging device including a first substrate having a pixelcircuit including a pixel array unit formed thereon and a secondsubstrate having a plurality of signal processing circuits formedthereon, wherein the plurality of signal processing circuits arearranged adjacent to one another and include a spacing regiontherebetween, and wherein the first substrate and the second substrateare stacked.

Advantageous Effects of Invention

According to the first to third embodiments of the present technology,it is possible to reduce the manufacturing cost of the solid-stateimaging device.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view schematically illustrating a solid-stateimaging device according to a first embodiment of the presenttechnology.

FIG. 2 is a circuit diagram illustrating a specific configuration of apixel circuit and a signal processing circuit of the solid-state imagingdevice according to the first embodiment.

FIG. 3 is a block diagram illustrating a specific configuration exampleof a signal processing unit of the solid-state imaging device accordingto the first embodiment.

FIG. 4 is a diagram schematically illustrating a layout of a logic boardof the solid-state imaging device according to the first embodiment.

FIG. 5 is a diagram illustrating an example of a connection method ofthe signal processing circuit.

FIG. 6 is a diagram illustrating an imaging process of the solid-stateimaging device according to the first embodiment.

FIG. 7 is a diagram illustrating a configuration method of a left signalprocessing circuit and a right signal processing circuit.

FIG. 8 is a diagram illustrating the configuration method of the leftsignal processing circuit and the right signal processing circuit.

FIG. 9 is a diagram illustrating a manufacturing method of thesolid-state imaging device according to the first embodiment.

FIG. 10 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the first embodiment.

FIG. 11 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the first embodiment.

FIG. 12 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the first embodiment.

FIG. 13 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the first embodiment.

FIG. 14 is a perspective view schematically illustrating a solid-stateimaging device according to a second embodiment of the presenttechnology.

FIG. 15 is a diagram illustrating an imaging process of the solid-stateimaging device according to the second embodiment.

FIG. 16 is a diagram illustrating a manufacturing method of thesolid-state imaging device according to the second embodiment.

FIG. 17 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the second embodiment.

FIG. 18 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the second embodiment.

FIG. 19 is a diagram illustrating the manufacturing method of thesolid-state imaging device according to the second embodiment.

FIG. 20 is a perspective view schematically illustrating a solid-stateimaging device according to a third embodiment of the presenttechnology.

FIG. 21 is a cross-sectional view schematically illustrating thesolid-state imaging device according to the third embodiment of thepresent technology.

FIG. 22 is a diagram illustrating an example of a connection method ofthe signal processing circuit.

FIG. 23 is a diagram schematically illustrating a configuration exampleof a pixel substrate and a logic board, in a case of employing a pixelAD conversion method.

FIG. 24 is a plan view schematically illustrating the first embodimentof the logic board configured to avoid interference between a wiring ofan inter-circuit wiring layer and a moisture-resistant ring.

FIG. 25 is a cross-sectional view schematically illustrating the firstembodiment of the moisture-resistant ring.

FIG. 26 is a perspective view schematically illustrating the firstembodiment of the moisture-resistant ring.

FIG. 27 is a plan view schematically illustrating the second embodimentof the logic board configured to avoid interference between the wiringof the inter-circuit wiring layer and the moisture-resistant ring.

FIG. 28 is a first cross-sectional view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 29 is a first perspective view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 30 is a second cross-sectional view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 31 is a second perspective view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 32 is a third cross-sectional view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 33 is a third perspective view schematically illustrating thesecond embodiment of the moisture-resistant ring.

FIG. 34 is a diagram illustrating a manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 35 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 36 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 37 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 38 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 39 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 40 is a diagram illustrating the manufacturing method of the secondembodiment of the moisture-resistant ring.

FIG. 41 is a block diagram illustrating a configuration example of anelectronic apparatus.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments for carrying out the present technology(hereinafter, referred to as embodiments) will be described. Inaddition, a description will be made in the following order.

1. First embodiment (example of signal processing circuit not beingelectrically connected)

2. Second embodiment (example of signal processing circuit beingelectrically connected in logic board)

3. Third embodiment (example of signal processing circuit beingelectrically connected in pixel substrate)

4. Modifications

1. First Embodiment

{1-1. System Configuration}

FIG. 1 is a perspective view schematically illustrating a configurationexample of a solid-state imaging device 1 according to a firstembodiment of the present technology. In addition, here, a case wherethe solid-state imaging device 1 is a CMOS image sensor will bedescribed as an example, but the present technology is not limited toapplication to the CMOS image sensor.

The solid-state imaging device 1 is a semiconductor chip of a structurein which a pixel substrate 11 and a logic board 12 are stacked(so-called, a stacked structure). Further, the solid-state imagingdevice 1 is a back-illuminated type CMOS image sensor in which a wiringlayer of the pixel substrate 11 and a wiring layer of the logic board 12are stacked so as to be adjacent to each other. In addition, the presenttechnology is not limited to application to the back-illuminated typeCMOS image sensor.

The pixel substrate 11 is a semiconductor substrate in which a pixelcircuit 21 is formed, and the pixel circuit 21 includes a pixel arrayunit (a pixel unit) 31 in which each of the unit pixels 32 includes aphotoelectric conversion element and is arranged two-dimensionally in amatrix. In addition, for example, pads for providing external electricalconnection and vias for electrical connection with the logic board 12,which are not shown, are provided in a peripheral portion surrounding apixel array unit 31 of the pixel circuit 21. A pixel signal obtainedfrom each unit pixel 32 of the pixel array unit 31 is an analog signal,and the analog pixel signal is transmitted from the pixel substrate 11to the logic board 12 through the vias or the like.

The logic board 12 is a semiconductor substrate in which a signalprocessing circuit 41L and a signal processing circuit 41R having thesame circuit pattern are formed so as to be arranged to the left andright through a spacing region, such as a scribe region 42. In addition,in FIG. 1, the width of the scribe region 42 is widely exaggerated forclarity of illustration. This is also applied to the following drawings.

The signal processing circuit 41L performs, for example, a predeterminedsignal process, including digitalization (AD conversion) of the analogpixel signal that is read from each unit pixel 32 in the left halfregion of the pixel array unit 31, and stores the pixel data, which issubjected to the signal process. Further, the signal processing circuit41L reads, for example, the stored pixel data in a predetermined order,and outputs the pixel data to the outside of the chip. Thus, the pixeldata obtained from the unit pixels 32 in the left half region of thepixel array unit 31 is output from the signal processing circuit 41L.

The signal processing circuit 41R performs, for example, a predeterminedsignal process, including digitalization (AD conversion) of the analogpixel signal read from each unit pixel 32 in the right half region ofthe pixel array unit 31, and stores the pixel data, which is subjectedto the signal process. Further, the signal processing circuit 41R reads,for example, the stored pixel data in a predetermined order, and outputsthe pixel data to the outside of the chip. Thus, the pixel data obtainedfrom the unit pixels 32 in the right half region of the pixel array unit31 is output from the signal processing circuit 41R.

Further, the signal processing circuit 41L and the signal processingcircuit 41R control respective units of the solid-state imaging device 1while synchronizing, for example, the pixel circuit 21.

Thus, it is possible to make the area of the pixel substrate 11substantially equal to the area of the pixel array unit 31 by using astacked structure of the pixel substrate 11 and the logic board 12. As aresult, it is possible to reduce the size of the solid-state imagingdevice 1, and thus, it is possible to reduce the overall size of thechip. Further, it is possible to improve the aperture ratio of thesolid-state imaging device 1.

In addition, since it is possible to perform a process suitable formaking the unit pixel 32 or the like on the pixel substrate 11 andperform a process suitable for making the signal processing circuits 41Land 41R on the logic board 12, it is possible to optimize the processduring manufacturing of the solid-state imaging device 1.

In addition, the area of the pixel circuit 21 is greater than theexposure range of an exposure apparatus, and thus separate exposure isnecessary. Meanwhile, each of the areas of the signal processing circuit41L and the signal processing circuit 41R is smaller than the exposurerange of the exposure apparatus, and thus one-shot exposure is possible.

In addition, hereinafter, if there is no need to distinguish the signalprocessing circuit 41L and the signal processing circuit 41R, they aresimply referred to as a signal processing circuit 41.

{1-2. Circuit Configuration}

FIG. 2 is a circuit diagram illustrating a specific configuration of thepixel circuit 21 on the pixel substrate 11 and the signal processingcircuits 41L and 41R on the logic board 12 of the solid-state imagingdevice 1. In addition, as described above, the pixel circuit 21 and thesignal processing circuits 41L and 41R are electrically connectedthrough vias, not shown.

(Configuration of Pixel Circuit 21)

First, the configuration of the pixel circuit 21 on the pixel substrate11 will be described. In addition to the pixel array unit 31, in whichthe unit pixels 32 are arranged two-dimensionally in a matrix, a rowselection unit 33 that selects each unit pixel 32 of the pixel arrayunit 31 in units of rows based on an address signal applied from thelogic board 12 is provided in the pixel circuit 21. In addition, here,although the row selection unit 33 is provided on the pixel substrate11, it is also possible to provide the row selection unit 33 on thelogic board 12.

The unit pixel 32 includes, for example, a photodiode 51 as aphotoelectric conversion element. Further, the unit pixel 32 includesfour transistors, for example, a transfer transistor (transfer gate) 52,a reset transistor 53, an amplifying transistor 54, and a selectiontransistor 55, in addition to the photodiode 51.

Here, for example, N channel transistors are used as the fourtransistors 52 to 55. However, here, a combination of the conductivitytypes of the transfer transistor 52, the reset transistor 53, theamplifying transistor 54, and the selection transistor 55 is only anexample, and a combination is not limited to the combination. In otherwords, as necessary, it is possible to use a combination of P-channeltransistors.

A transfer signal TRG, a reset signal RST, and a selection signal SELwhich are drive signals for driving the unit pixel 32 are appropriatelysupplied to the unit pixel 32 from the row selection unit 33. In otherwords, the transfer signal TRG, the reset signal RST, and the selectionsignal SEL are respectively applied to the gate electrode of thetransfer transistor 52, the gate electrode of the reset transistor 53,and the gate electrode of the selection transistor 55.

The photodiode 51 has an anode electrode connected to a power supply ofa low potential (e.g., ground), and accumulates the photoelectriccharges by converting the received light (incident light) intophotoelectric charges (here, photoelectrons) of the charge quantitycorresponding to the light quantity. The cathode electrode of thephotodiode 51 is electrically connected to the gate electrode of theamplifying transistor 54 through the transfer transistor 52. A node 56electrically connected to the gate electrode of the amplifyingtransistor 54 is referred to as a floating diffusion (FD) regionportion.

The transfer transistor 52 is connected between the cathode electrode ofthe photodiode 51 and the FD portion 56. The transfer signal TRG of ahigh level (e.g., V_(DD) level), which is active (hereinafter, referredto as “High active”), is applied to the gate electrode of the transfertransistor 52 from the row selection unit 33. The transfer transistor 52becomes conductive in response to the transfer signal TRG, and thephotoelectric charges obtained through the photoelectric conversion bythe photodiode 51 are transferred to the FD portion 56.

The reset transistor 53 includes a drain electrode connected to a pixelpower supply V_(DD) and a source electrode connected to the FD portion56. The High active reset signal RST is applied to the gate electrode ofthe reset transistor 53 from the row selection unit 33. The resettransistor 53 becomes conductive in response to the reset signal RST,and the FD portion 56 is reset by discarding the charges in the FDportion 56 to the pixel power supply V_(DD).

The amplifying transistor 54 includes a gate electrode connected to theFD portion 56, and a drain electrode connected to a pixel power supplyV_(DD). Then, the amplifying transistor 54 outputs the potential of theFD portion 56 after being reset by the reset transistor 53, as a resetsignal (reset level) Vreset. The amplifying transistor 54 outputs thepotential of the FD portion 56 after the signal charges thereof beingtransferred by the transfer transistor 52, as a light accumulationsignal (signal level) Vsig.

The selection transistor 55 includes, for example, a drain electrodeconnected to the source electrode of the amplifying transistor 54 and asource electrode connected to a signal line 34. The High activeselection signal SEL is applied to the gate electrode of the selectiontransistor 55 from the row selection unit 33. The selection transistor55 becomes conductive in response to the selection signal SEL, and thesignals output from the amplifying transistor 54 are read to the signalline 34, with the unit pixel 32 as the selected state.

As is apparent from the above description, the potential of the FDportion 56 after being reset is read as a reset level Vreset, and thepotential of the FD portion 56 after the signal charges beingtransferred is read as a signal level Vsig from the unit pixel 32, tothe signal line 34, in order. In addition, the signal level Vsig alsoincludes the component of the reset level Vreset.

In addition, here, a circuit configuration is used in which theselection transistor 55 is connected between the source electrode of theamplifying transistor 54 and the signal line 34, but it is possible toemploy a circuit configuration in which the selection transistor 55 isconnected between the pixel power supply V_(DD) and the drain electrodeof the amplifying transistor 54.

Further, the unit pixel 32 is not limited to a pixel structure includingthe above four transistors. For example, a pixel structure includingthree transistors, in which the amplifying transistor 54 also has thefunction of the selection transistor 55, or a pixel structure in which aplurality of photoelectric conversion elements (i.e., pixels) sharetransistors following the FD portion 56 may be used, and theconfiguration of the pixel circuit does not matter.

(Configuration of Signal Processing Circuits 41L and 41R)

Next, the configuration of the signal processing circuits 41L and 41R onthe logic board 12 will be described. In addition, as described above,the signal processing circuit 41L and the signal processing circuit 41Rhave the same circuit pattern, and thus here, the configuration of thesignal processing circuit 41L will be mainly described.

The signal processing circuit 41L is a circuit for mainly processingpixel signals from the unit pixel 32 in the left half region of thepixel array unit 31. The signal processing circuit 41L is configured toinclude a current source 61L, a decoder 62L, a control unit 63L, a rowdecoder 64L, a signal processing unit 65L, a column decoder/senseamplifier 66L, a memory unit 67L, a data processing unit 68L, and aninterface (IF) unit 69L.

The current source 61L is connected to each signal line 34 from which asignal is read for each pixel column from each unit pixel 32 of thepixel array unit 31. The current source 61L has a so-called load MOScircuit configuration, which includes a MOS transistor, of which thegate potential is biased at a constant potential so as to provide, forexample, a constant current to the signal line 34. The current source61L of the load MOS circuit configuration causes the amplifyingtransistor 54 to operate as a source follower, by supplying a constantcurrent to the amplifying transistor 54 of the unit pixel 32 of theselected row.

The decoder 62L applies an address signal for specifying the address ofthe selected row to the row selection unit 33, when selecting each unitpixel 32 of the pixel array unit 31 in units of rows, under the controlof the control unit 63L.

The row decoder 64L specifies a row address when writing pixel data tothe memory unit 67L or reading pixel data from the memory unit 67L underthe control of the control unit 63L.

The signal processing unit 65L includes at least AD converters 81L-1 to81L-n that digitize (AD conversion) analog pixel signals which are readout from each unit pixel 32 of the pixel array unit 31 through thesignal line 34. Then, the signal processing unit 65L is configured so asto perform a signal process on the analog pixel signal in parallel inunits of pixel columns (column parallel AD). In addition, if there is noneed to distinguish the AD converters 81L-1 to 81L-n, hereinafter, theyare simply referred to as an AD converter 81L.

The signal processing unit 65L further includes a reference voltagegeneration unit 82L that generates a reference voltage used during theAD conversion in each AD converter 81L. The reference voltage generationunit 82L generates a reference voltage of a so-called ramp waveform (aslope-like waveform) of which a voltage value varies in a stepwisemanner over time. The reference voltage generation unit 82L can beconfigured by using, for example, a digital-analog conversion (DAC)circuit.

The AD converter 81L is provided, for example, for each pixel column ofthe pixel array unit 31, that is, for each signal line 34. In otherwords, the AD converter 81L is a so-called column parallel AD converter,and the column parallel AD converters of the number of pixel columns inthe left half of the pixel array unit 31 are arranged. Then, the ADconverter 81L generates a pulse signal having for example, a size in thetime-axis direction corresponding to the size of the level of a pixelsignal (i.e., pulse width), and performs the AD conversion process bymeasuring the length of the period of the pulse width of the pulsesignal.

More specifically, for example, the AD converter 81L-1 is configured toinclude at least a comparator (COMP) 91L-1 and a counter 92L-1, asillustrated in FIG. 2. The comparator 91L-1 regards the analog pixelsignals (the signal level Vsig and the reset level Vreset, which aredescribed previously), which are read from the unit pixel 32 through thesignal line 34 as a comparative input, regards a reference voltage Vrefof a ramp wave, which is supplied from the reference voltage generationunit 82L as a reference input, and compares both inputs.

Then, in the comparator 91L-1, for example, when the reference voltageVref is greater than the pixel signal, the output becomes a first state(e.g., a high level), and when the reference voltage Vref is equal to orless than the pixel signal, the output becomes a second state (e.g., alow level). The output signal of the comparator 91L-1 is a pulse signalhaving a pulse width corresponding to the magnitude of the level ofpixel signal.

For example, an up/down counter is used as the counter 92L-1. The clockCK is applied to the counter 92L-1, at the same timing as the supplystart timing of the reference voltage Vref for the comparator 91L. Sincethe counter 92L-1, which is the up/down counter, performs down-countingor up-counting in synchronization with the clock CK, the counter 92L-1measures the duration of the pulse width of the output pulse of thecomparator 91L-1, that is, a comparison period from the start of thecomparison operation to the end of the comparison operation. During themeasurement operation, with respect to the reset level Vreset and thesignal level Vsig, which are read in order from the unit pixel 32, thecounter 92L-1 performs down-counting for the reset level Vreset andup-counting for the signal level Vsig.

It is possible to obtain a difference between the signal level Vsig andthe reset level Vreset by the operation of the down counter/up counter.As a result, the AD converter 81L-1 performs a correlated doublesampling (CDS) process in addition to AD conversion process. The CDSprocess is a process of removing a pixel-specific fixed pattern noise,such as a reset noise of the unit pixel 32 and threshold variations inthe amplifying transistor 54, by obtaining a difference between thesignal level Vsig and the reset level Vreset. Then, the count result(i.e., count value) of the counter 92L-1 is a digital value obtained bydigitizing the analog pixel signals.

In addition, the AD converters 81L-2 to 81L-n have the sameconfiguration as that of the AD converter 81L-1, and thus the redundantdescription thereof will be omitted. Further, when there is no need todistinguish the comparators 91L-1 to 91L-n, hereinafter, they are simplyreferred to as a comparator 91L, and when there is no need todistinguish the counters 92L-1 to 92L-n, hereinafter, they are simplyreferred to as a counter 92L.

FIG. 3 is a block diagram illustrating an example of a specificconfiguration of the signal processing unit 65L. The signal processingunit 65L includes a data latch unit 83L and a parallel-serial conversionunit 84L, in addition to the AD converter 81L and the reference voltagegeneration unit 82L. The signal processing unit 65L has a pipelineconfiguration for pipeline-transferring the pixel data digitized by theAD converter 81L to the memory unit 67L. In this case, the signalprocessing unit 65L performs a digitization process by the AD converter81L within one horizontal period, and performs a process of transferringthe digitized pixel data to the data latch unit 83L in the next onehorizontal period.

Meanwhile, the column decoder/sense amplifier 66L is provided as aperipheral circuit in the memory unit 67L. While the row decoder 64Ldescribed above (see FIG. 2) specifies the row address for the memoryunit 67L, the column decoder specifies the column address for the memoryunit 67L. Further, the sense amplifier amplifies a weak voltage, whichis read through the hit lines from the memory unit 67L, to a level thatcan be handled as a digital level. Then, the pixel data read out throughthe column decoder/sense amplifier 66L is output to the outside of thelogic board 12 through the data processing unit 68L and the interfaceunit 69L.

In addition, here, the case of having one column parallel AD converter81L is described as an example, but the present embodiment is notlimited thereto, and it is possible to employ a configuration in whichtwo or more AD converters 81L are provided, and the two or more ADconverters 81L are subjected to the digitization process in parallel.

In this case, two or more AD converters 81L are arranged, for example,in the extending direction of the signal line 34 of the pixel array unit31, in other words, they are arranged by being divided into upper andlower sides of the pixel array unit 31. When two or more AD converters81L are provided, respectively, two or more (two systems) of the datalatch units 83L, the parallel-serial conversion units 84L, and thememory units 67L are provided corresponding thereto.

Thus, in a solid-state imaging device 1 employing a structure in whichfor example, two systems of AD converters 81L and the like are provided,the row scanning is performed in parallel for every two pixel rows.Then, signals of the respective pixels of one pixel row are read to oneside in the vertical direction of the pixel array unit 31, and signalsof the respective pixels of the other pixel row are read to the otherside in the vertical direction of the pixel array unit 31, and thesignals are digitized in parallel by two AD converters 81L. Similarly,the subsequent signal processes are performed in parallel. As a result,as compared with the case of performing row scan for each one pixel row,it is possible to perform high-speed readout of pixel data.

In addition, although detailed illustration and description thereof isomitted, the signal processing circuit 41R also has the sameconfiguration as that of the signal processing circuit 41L. Then, thesignal processing circuit 41R mainly processes pixel signals from theunit pixel 32 in the right half region of the pixel array unit 31.

In addition, hereinafter, the reference symbols of the respective unitsof the signal processing circuit 41R, not shown, are denoted byreplacing L in the reference symbols of the respective units of thesignal processing circuit 41L with R.

{1-3. Layout of Logic Board 12}

FIG. 4 illustrates an example of a layout of the logic board 12. Asillustrated in FIG. 4, the signal processing circuit 41L and the signalprocessing circuit 41R of the logic board 12 have the layouts of thesame symmetry.

In the signal processing circuit 41L, an AD conversion unit 101L-1, amemory unit 102L-1, a logic unit 103L, a memory unit 102L-2, and an ADconversion unit 101L-2 are stacked in order from the top. In addition,an interface unit 104L-1 and an interface unit 104L-2 are located on theleft and right sides of the stacked portion. Furthermore, vias 105L-1 to105L-4 are arranged in the upper, lower, right and left ends of thesignal processing circuit 41L.

For example, the current source 61L, the AD converters 81L-1 to 81L-n,the reference voltage generation unit 82L, the data latch unit 83L, andthe parallel-serial conversion unit 84L, which are illustrated in FIGS.2 and 3, are disposed and arranged in the AD conversion units 101L-1 and101L-2.

In addition, in this example, the AD converter 81L and the circuitportion associated therewith are arranged to be stacked in each of thethree stages, in the AD conversion units 101L-1 and 101L-2. In otherwords, the AD converter 81L and the circuit portion associated therewithare arranged while being divided into six systems in the signalprocessing circuit 41L. Then, the signal processing circuit 41L performsrow scanning, for example, for every six pixel rows in parallel.

Further, the pixel signal from each unit pixel 32 in the pixel arrayunit 31 is supplied to the respective AD converters 81L disposed in theAD conversion units 101L-1 and 101L-2 through the vias 105L-1 to 105L-4.

For example, the column decorder/sense amplifier 66L and the memory unit67L, which are illustrated in FIG. 3, are dispersed and arranged in thememory units 102L-1 and 102L-2. Then, the memory unit 102L-1 storespixel data supplied from the AD conversion unit 101L-1, and the memoryunit 102L-2 stores pixel data supplied from the AD conversion unit101L-2.

For example, the decoder 62L, the control unit 63L, the row decoder 64L,and the data processing unit 68L, which are illustrated in FIG. 2, arearranged in the logic unit 103L.

For example, the interface unit 69L illustrated in FIG. 2 is arranged inthe interface units 104L-1 and 104L-2, respectively.

In addition, since the signal processing circuit 41R has the same layoutas that of the signal processing circuit 41L, the description thereof isomitted to avoid redundance.

Further, the configurations and layouts of the signal processingcircuits 41L and 41R described above are examples, and a configurationand a layout other than those described above are possible.

{1-4. Imaging Process of Solid-State Imaging Device 1}

Next, an imaging process of the solid-state imaging device 1 will besimply described with reference to FIG. 5 and FIG. 6.

FIG. 5 illustrates an example of a method of connecting the signalprocessing circuits 41L and 41R of the solid-state imaging device 1 andthe external signal processing LSI 121. Specifically, the signalprocessing LSI 121 is connected to the interface unit 104L-1 of thesignal processing circuit 41L and the interface unit 104R-2 of thesignal processing circuit 41R.

For example, when the solid-state imaging device 1 captures an image ofan object 141 of FIG. 6, pixel signals from the unit pixel 32 in theleft half region of the pixel array unit 31 are supplied to the signalprocessing circuit 41L, and pixel signals from the unit pixel 32 in theright half region are supplied to the signal processing circuit 41R, inother words, the pixel signals corresponding to the left half part ofthe object 141 are supplied to the signal processing circuit 41L, andthe pixel signals corresponding to the right half part of the object 141are supplied to the signal processing circuit 41R.

The signal processing circuit 41L generates the pixel data 142Lcorresponding to the left half part of the object 141, based on thepixel signals supplied from the pixel circuit 21. Similarly, the signalprocessing circuit 41R generates the pixel data 142R corresponding tothe right half part of the object 141, based on the pixel signalssupplied from the pixel circuit 21.

Then, the signal processing circuit 41L outputs the generated pixel data142L from the interface unit 104L-1, and supplies the pixel data to thesignal processing LSI 121. The signal processing circuit 41R outputs thegenerated pixel data 142R from the interface unit 104R-2, and suppliesthe pixel data to the signal processing LSI 121.

The signal processing LSI 121 generates one piece of pixel data 143 bycombining the pixel data 142L and the pixel data 142R, and outputs thegenerated pixel data 143.

In this manner, since the left and right parts of pixel data aregenerated independently in the solid-state imaging device 1, it ispossible to speed up the process.

{1-5. Configuration Method of Left and Right Signal Processing Circuits41}

As described above, the respective signal processing circuits 41 havethe common circuit pattern and the same function. Meanwhile, asdescribed above, the signal processing circuit 41L generates pixel dataof the left half part of the object, and outputs the generated pixeldata from the interface unit 104L-1 on the left side. Further, thesignal processing circuit 41R generates pixel data of the right halfpart of the object, and outputs the generated pixel data from theinterface unit 104R-2 on the right side. In other words, the signalprocessing circuit 41L operates as a circuit, which is located on theleft side of the logic board 12, and the signal processing circuit 41Roperates as a circuit, which is located on the right side of the logicboard 12.

Thus, each signal processing circuit 41 has both functions so as to beable to operate as either the signal processing circuit 41L on the leftside or the signal processing circuit 41R on the right side. Then, eachof the signal processing circuits 41 is configured so as to operate asthe signal processing circuit 41L on the left side or the signalprocessing circuit 41R on the right side by a signal from the outside.In other words, a valid function and an invalid function of each of thesignal processing circuits 41 are set by the signal from the outside.

Specifically, for example, as schematically illustrated in FIG. 7, thesignal processing circuits 41L and 41R are respectively connected to anexternal substrate 161, by bonding wires 162L and 162R. In addition, thesubstrate 161 may be provided in the solid-state imaging device 1 andthe same package, or may be provided outside the package.

Then, the substrate 161 supplies a selection signal to the signalprocessing circuit 41L through the bonding wire 162L. The selectionsignal is, for example, one of the values of the power supply level(High) and the ground level (Low). The signal processing circuit 41Lincludes a multiplexer 171L and a core 172L which are illustrated inFIG. 8. Then, the selection signal from the substrate 161 is input tothe multiplexer 171L, and the multiplexer 171L supplies a setting signalindicating a value of 0 or 1 according to the selection signal to thecore 172L.

With respect to a setting signal, when performing the setting for theleft circuit (signal processing circuit 41L), the value is 0, and whenperforming the setting for the right circuit (signal processing circuit41R), the value is 1. Then, the core 172L stores the value of thesetting signal in a register, which is not shown, and the signalprocessing circuit 41L operates according to the value of the register.For example, the value of the register of the signal processing circuit41L is set to 0, and the signal processing circuit 41L operates as thesignal processing circuit on the left side.

In addition, without being illustrated, a multiplexer 171R and a core172R are also provided in the signal processing circuit 41R, similar tothe signal processing circuit 41L. Then, the signal processing circuit41R is configured so as to operate as the signal processing circuit onthe right side by the selection signal supplied from the substrate 161through the bonding wire 162R, by using the same method as in the signalprocessing circuit 41L.

Further, since the signal processing circuit 41L and the signalprocessing circuit 41R have the same function, the function isduplicated. Thus, for the function, which may be performed by only oneof the signal processing circuits 41, the function of one of the signalprocessing circuits 41 is enabled and the function of the other of thesignal processing circuits 41 is disabled by the selection signal.

{1-6. Manufacturing Method of Solid-State Imaging Device 1}

Next, a manufacturing method of the solid-state imaging device 1 will bedescribed with reference to FIG. 9 to FIG. 13. In addition, in FIG. 9 toFIG. 13, for clarity of illustration, only the pixel circuit 21 and thesignal processing circuit 41 are illustrated, and the illustration of awafer (semiconductor substrate) having the pixel circuit 21 and thesignal processing circuit 41 formed thereon is omitted.

First, as illustrated in FIG. 9, pixel circuits 21-1, 21-2, . . . areformed on the wafer (semiconductor substrate) not shown. In this case,since the area of each pixel circuit 21 is greater than the exposurerange of an exposure apparatus, separate exposure is used for exposureof each pixel circuit 21.

Further, a scribe region 22 is provided in a longitudinal direction anda transverse direction between the adjacent pixel circuits 21. Inaddition, in FIG. 9, the width of the scribe region 22 is shown whilebeing widely exaggerated in order to facilitate understanding ofillustration. This is also applied to the following drawings.

Further, in FIG. 9, only two pixel circuits 21 of 2 rows*1 column areillustrated, but in fact, pixel circuits 21 of numbers greater than twoare formed so as to be two-dimensionally arranged.

Further, according to a manufacturing process other than in FIG. 9, asillustrated in FIG. 10, signal processing circuits 41L-1, 41R-1, 41L-2,42R-2, . . . are formed on the wafer (semiconductor substrate) which isnot illustrated. Among them, the signal processing circuit 41L-1 and thesignal processing circuit 41R-1 are arranged on the same logic board 12,and the signal processing circuit 41L-2 and the signal processingcircuit 41R-2 are arranged on the same logic board 12. In this case,since the area of the each signal processing circuit 41 is smaller thanthe exposure range of an exposure apparatus, one-shot exposure is usedfor the exposure of each signal processing circuit 41.

Further, a scribe region 42 is provided in a longitudinal direction anda transverse direction between signal processing circuits 41. It is ofcourse that the scribe region 42 is provided between signal processingcircuits 41, which are arranged on the same logic board 12.

Further, in FIG. 10, only four signal processing circuits 41 of 2 rows*2columns are illustrated, but in fact, a larger number of signalprocessing circuits 41 are formed so as to be two-dimensionallyarranged.

Next, as illustrated in FIG. 11, the wafer (hereinafter, referred to asa pixel wafer) having the pixel circuit 21 formed thereon and the wafer(hereinafter, referred to as a logic wafer) having the signal processingcircuit 41 formed thereon are bonded, and the pixel wafer and the logicwafer are stacked.

Here, the areas of the signal processing circuits 41 and the pixelcircuits 21, which are respectively adjacent to the left and rightthrough the scribe region 42, are substantially the same, and the pixelwafer and the logic wafer are stacked such that the scribe region 22 ofthe pixel wafer and the scribe region 42 of the logic wafer areoverlapped. Thus, the pixel circuits 21 are perfectly overlapped on thesignal processing circuits 41, which are adjacent to the left and right.For example, the pixel circuit 21-1 is perfectly overlapped on thesignal processing circuit 41L-1 and the signal processing circuit 41R-1,which are adjacent to the left and right through the scribe region 42.

Further, the solid-state imaging device 1 is a back-illuminated type,and the pixel wafer and the logic wafer are stacked such that thesubstrate layer having the pixel circuit 21 of the logic wafer providedtherein faces above and the wiring layer of the logic wafer and thewiring layer of the pixel wafer are adjacent.

In addition, hereinafter, a wafer in which the pixel wafer and the logicwafer are stacked is referred to as a stacked wafer.

Next, as indicated by thick dotted lines in FIG. 12, the stacked waferis cut into units of chips. In other words, the stacked wafer is cutalong the scribe region 22 of the pixel wafer provided around each pixelcircuit 21. In addition, the scribe region 42 of the logic wafer, whichdoes not overlap with the scribe region 22 of the pixel wafer, is leftas it is without being cut.

Thus, a solid-state imaging device in which the pixel circuit 21 isstacked on the signal processing circuits 41, which are adjacent to theleft and right, while the scribe region 42 is left is singulated. Forexample, as illustrated in FIG. 13, a solid-state imaging device 1-1, inwhich the pixel circuit 21-1 is stacked on the signal processingcircuits 41L-1 and 41R-1, which are adjacent through the scribe region42, is singulated.

In this manner, even when the area of the pixel circuit 21 on the pixelsubstrate 11 is greater than the exposure range of an exposureapparatus, and separate exposure is necessary, each signal processingcircuit 41 on the logic board 12 is manufactured by one-shot exposure,without using the separate exposure. Further, regardless of whether eachsignal processing circuit 41 is disposed in either one of the left andright of the solid-state imaging device 1, the signal processingcircuits 41 of the same circuit pattern are formed so as to betwo-dimensionally arranged at a certain distance (i.e., scribe region42). Thus, for example, it is possible to reduce the types of thephotomasks necessary for manufacture of the logic board 12, and even anexposure apparatus without a photomask changing apparatus canmanufacture the logic board 12.

2. Second Embodiment

As described above, in the solid-state imaging device 1, two signalprocessing circuits each independently performs a process while notbeing electrically connected. In contrast, in a second embodiment of thepresent technology, two signal processing circuits perform someprocesses in cooperation with each other while being electricallyconnected.

{2-1. System Configuration}

FIG. 14 is a perspective view schematically illustrating a configurationexample of a solid-state imaging device 201 according to the secondembodiment of the present technology. In addition, here, in FIG. 14, theportions corresponding to FIG. 1 are denoted by the same referencenumerals, and the description of the portions of the same process isredundant, so the description thereof will be appropriately omitted.

As illustrated in FIG. 14, the solid-state imaging device 201 is asemiconductor chip of a structure (so-called, a stacked structure) inwhich the pixel substrate 11 and the logic board 211 are stacked,similar to the solid-state imaging device 1.

The logic board 211 is different from the logic board 12 in that signalprocessing circuits 241L and 241R are provided instead of the signalprocessing circuits 41L and 41R. Further, the logic board 211 isdifferent from the logic board 12 in that a wiring layer (hereinafter,referred to as inter-circuit wiring layer) for electrically connectingthe signal processing circuit 241L and the signal processing circuit241R is provided on the top of the logic board 12. In other words, thepattern denoted by oblique lines on the logic board 211 of FIG. 14represents a wiring pattern of the inter-circuit wiring layer, and thesignal processing circuit 241L and the signal processing circuit 241Rare electrically connected in the inter-circuit wiring layer.

Further, part of the layout of the signal processing circuits 241L and241R is different from that of the signal processing circuits 41L and41R, as described later with reference to FIG. 15.

In addition, when there is no need to distinguish the signal processingcircuit 241L and the signal processing circuit 241R, hereinafter, theyare simply referred to as a signal processing circuit 241.

{2-2. Layout of Logic Board 211}

FIG. 15 illustrates an example of a layout of the logic board 211. Inaddition, in FIG. 15, the illustration of the inter-circuit wiring layeris omitted. Further, in FIG. 15, the portions corresponding to FIG. 4are denoted by the same reference numerals, and the description of theportions of the same process will be omitted.

The signal processing circuit 241L is different from the signalprocessing circuit 41L of FIG. 4 in that the interface unit 104L-1 isomitted, and only the interface unit 104L-2 is provided. Similarly, thesignal processing circuit 241R is different from the signal processingcircuit 41R of FIG. 4 in that the interface unit 104R-1 is omitted, andonly the interface unit 104R-2 is provided.

{2-3. Imaging process of solid-state imaging device 201}

Next, an imaging process of the solid-state imaging device 201 will besimply described with reference to FIG. 6 and FIG. 15.

For example, when the solid-state imaging device 201 captures an object141 of FIG. 6, pixel signals from the unit pixels 32 in the left halfregion of the pixel array unit 31 are supplied to the signal processingcircuit 241L and pixel signals from the unit pixels 32 in the right halfregion are supplied to the signal processing circuit 241R, in otherwords, the pixel signals corresponding to the left half part of theobject 141 are supplied to the signal processing circuit 241L, and thepixel signals corresponding to the right half part of the object 141 aresupplied to the signal processing circuit 241R.

The signal processing circuit 241L generates the pixel data 142Lcorresponding to the left half part of the object 141, based on thepixel signals supplied from the pixel circuit 21. Similarly, the signalprocessing circuit 241R generates the pixel data 142R corresponding tothe right half part of the object 141, based on the pixel signalssupplied from the pixel circuit 21.

The processes up to here are the same as in the solid-state imagingdevice 1 described above.

Then, logic unit 103L of the signal processing circuit 241L supplies thegenerated pixel data 142L to the logic unit 103R of the signalprocessing circuit 241R through the inter-circuit wiring layer, which isnot shown.

The logic unit 103R generates one piece of pixel data 143 by combiningthe pixel data 142L supplied from the signal processing circuit 241L andthe pixel data 142R that the logic unit 103R generates. Then, the logicunit 103R outputs the generated pixel data 143 to the outside throughthe interface unit 104R-2.

In this manner, the solid-state imaging device 201 can generate andoutput one completed pixel data without using a device, such as anexternal LSI, differently from the solid-state imaging device 1.Therefore, the signal processing LSI 121 does not have to be externallyprovided and it is possible to reduce costs.

In addition, even in the solid-state imaging device 201, similar to thesolid-state imaging device 1, the signal processing circuit 241L and thesignal processing circuit 241R are configured so as to operate as eitherone of the left and right signal processing circuits by the methoddescribed with reference to FIG. 7 and FIG. 8.

<Manufacturing Method of Solid-State Imaging Device 201>

Next, a manufacturing method of the solid-state imaging device 201 willbe described with reference to FIG. 9 and FIG. 10, which are previouslyillustrated, and FIG. 16 to FIG. 19. In addition, in FIG. 16 to FIG. 19,similar to FIG. 9 to FIG. 13, for clarity of illustration, only thepixel circuit 21 and the signal processing circuit 241 are illustrated,and the illustration of a wafer (semiconductor substrate) having thepixel circuit 21 and the signal processing circuit 241 formed thereon isomitted.

First, a pixel wafer in which pixel circuits 21 are arrangedtwo-dimensionally through the scribe region 22, and a logic wafer inwhich signal processing circuits 241 are arranged two-dimensionallythrough the scribe region 42 are manufactured by a method similar to themethod described above with reference to FIG. 9 and FIG. 10.

Next, as illustrated in FIG. 16, the inter-circuit wiring layer isformed on the top layer of the logic wafer. In addition, since theinter-circuit wiring layer has a size substantially the same as that ofthe pixel circuit 21 of the pixel substrate 11, it is formed by usingseparate exposure. Two signal processing circuits 241 (for example, thesignal processing circuit 241L-1 and the signal processing circuit241R-1), which are disposed in the same solid-state imaging device 201,are electrically connected through the inter-circuit wiring layer.

In addition, for example, a manufacturer of the logic wafer maymanufacture a logic wafer before exposure on which only a metal film foran inter-circuit wiring layer is formed, and deliver it to amanufacturer of the solid-state imaging device 201. Then, for example,the manufacturer of the solid-state imaging device 201 may stack thepixel wafer and the logic wafer after forming the inter-circuit wiringlayer of the logic wafer by the separate exposure. Thus, even amanufacturer without having separate exposure equipment can manufacturethe logic wafer.

Next, as illustrated in FIG. 17, the pixel wafer and the logic wafer arestacked by a method similar to the method described above with referenceto FIG. 11.

Then, as illustrated in FIG. 18, the stacked wafer is cut into units ofchips similar to the manufacturing process described above withreference to FIG. 12. Thus, for example, as illustrated in FIG. 19, thesolid-state imaging device 201-1, in which the pixel circuit 21-1 isstacked on the signal processing circuits 241L-1 and 241R-1, which areadjacent through the scribe region 42, is singulated.

In addition, although the example described above represents an examplein which the inter-circuit wiring layer is formed on the top layer ofthe logic board 211, the inter-circuit wiring layer may be formed on thelayer below the top layer. For example, when a plurality of wiringlayers are provided in the signal processing circuit 241, the signalprocessing circuit 241L and the signal processing circuit 241R may beconnected in the wiring layer, which is formed on the layer below thetop layer of the logic board 211.

Further, for example, the signal processing circuit 241L and the signalprocessing circuit 241R may be connected through a plurality of wiringlayers. In other words, a plurality of the inter-circuit wiring layersmay be formed. Further, not only a wiring for connecting the signalprocessing circuit 241L and the signal processing circuit 241R, but alsoan internal wiring of each signal processing circuit 241 (for example, awiring between elements) may be provided in the inter-circuit wiringlayer.

Further, even when the inter-circuit wiring layer is disposed in anylayer of the logic board 211, for example, among respective layers ofthe logic board 211, the inter-circuit wiring layer is formed byseparate exposure, and the other layer is formed by one-shot exposure.In addition, when the inter-circuit wiring layer is formed by differentmanufacturers as described above, it is preferable to form theinter-circuit wiring layer on the top layer of the logic board 211.

3. Third Embodiment

In a third embodiment of the present technology, the left and rightsignal processing circuits are electrically connected by a methoddifferent from that in the second embodiment.

Specifically, FIG. 20 is a perspective view schematically illustrating aconfiguration example of a solid-state imaging device 301 according tothe third embodiment of the present technology. Similar to thesolid-state imaging device 1 and the solid-state imaging device 201, thesolid-state imaging device 301 is a semiconductor chip of a structure(i.e., a stacked structure) in which the pixel substrate 311 (FIG. 21)having the pixel circuit 321 formed thereon and the logic board 312(FIG. 21) having the signal processing circuits 341L and 341R formedthereon are stacked.

A pixel array unit 331, similar to the pixel array unit 31 of the pixelcircuit 21 of FIG. 1, is formed on the pixel circuit 321. Further, thepixel circuit 321 has the same circuit configuration as that of thepixel circuit 21 described above with reference to FIG. 2. The signalprocessing circuits 341L and 341R have the same circuit configuration asthat of the signal processing circuits 41L and 41R described above withreference to FIG. 2 and FIG. 3. The logic board 312 has the same layoutas that of the logic board 12 described above with reference to FIG. 4.In this manner, the solid-state imaging device 301 has substantially thesame circuit configuration and layout as that of the solid-state imagingdevice 1.

However, the solid-state imaging device 301 is different from thesolid-state imaging device 1, and the signal processing circuit 341L andthe signal processing circuit 341R are electrically connected in thepixel substrate 311.

Specifically, FIG. 21 illustrates a XXI-XXI sectional view of thesolid-state imaging device 301 of FIG. 20. In other words, FIG. 21 is anoutside of the pixel array unit 331 of the pixel circuit 321, andillustrates a cross section of the solid-state imaging device 301 on thefront side in FIG. 20.

Since the solid-state imaging device 301 is a back-illuminated typeimaging element, the wiring layer of the pixel substrate 311 and thewiring layer of the logic board 312 are arranged so as to be adjacent.Thus, the substrate layer of the pixel substrate 311 is disposed on thetop, and the substrate layer of the logic board 312 is disposed on thebottom.

On the substrate layer of the pixel substrate 311, wirings 351L and 351Rare formed on the outside of the pixel array unit 331. The wiring 351Lis disposed above the signal processing circuit 341L, and the wiring351R is disposed above the signal processing circuit 341R.

Then, the wiring 351L is connected to the wiring layer of the signalprocessing circuit 341L, through a via 352L formed in the pixelsubstrate 311. Further, the wiring 351L is connected to a wiring 354Lthrough a via 353L. The wiring 354L is connected to a wiring 356Lthrough a via 355L. The wiring 356L is connected to a wiring 358 througha via 357L.

Then, the wiring 351R is connected to the wiring layer of the signalprocessing circuit 341R, through a via 352R formed in the pixelsubstrate 311. Further, the wiring 351R is connected to a wiring 354Rthrough a via 353R. The wiring 354R is connected to a wiring 356Rthrough a via 355R. The wiring 356R is connected to a wiring 358 througha via 357R.

Thus, the wiring layer of the signal processing circuit 341L and thewiring layer of the signal processing circuit 341R are electricallyconnected through the via 352L, the wiring 351L, the via 353L, thewiring 354L, the via 355L, the wiring 356L, the via 357L, the wiring358, the via 357R, the wiring 356R, the via 355R, the wiring 354R, thevia 353R, the wiring 351R, and the via 352R.

Accordingly, the solid-state imaging device 301 can also generate andoutput one piece of pixel data obtained by capturing an object, by themethod described above with reference to FIG. 6 and FIG. 15, similar tothe solid-state imaging device 201.

In addition, the wirings 351L and 351R, the vias 352L and 352R, and thelike of the pixel circuit 321 are formed, for example, during themanufacture of the pixel wafer described above with reference to FIG. 9.

Further, the number of layers of the wiring layer of the pixel substrate311 of FIG. 21 is an example, and it is possible to set any number oflayers. Further, for example, a wiring 358 for electrically connectingthe signal processing circuit 341L and the signal processing circuit341R in the wiring layer of the pixel substrate 311 may be provided inany wiring layer of the pixel substrate 311, and also, for example, maybe formed by being divided into a plurality of wiring layers.

4. Modifications

Hereinafter, modifications of the embodiments of the present technologydescribed above will be described.

{4-1. Modifications of Configuration of Solid-State Imaging Device}

(Modification of Logic Board)

The example of providing two signal processing circuits on the logicboard has been described above, but three or more signal processingcircuits may be provided.

Further, the circuit patterns and the sizes of the signal processingcircuits provided on a single logic board are not necessary all thesame, and it is also possible to mix signal processing circuits havingdifferent circuit patterns and sizes. Here, the manufacturing process issimpler and the manufacturing cost is less in the case of providingsignal processing circuits of the same circuit pattern on the logicboard, as compared to the case of mixing signal processing circuitshaving different circuit patterns and sizes.

(Variation of Stacked Structure)

Further, the example has been described above in which the solid-stateimaging device has a stacked structure of two layers of the pixelsubstrate and the logic board, but the present technology can be appliedto a stacked structure of three layers or more. For example, a logicboard may be further stacked under the logic board 12 of FIG. 1 (inother words, a surface opposite to the surface adjacent to the pixelsubstrate 11 of the logic board 12). In this case, for example, placingthe memory units 102L-1 to 102R-2 included in the signal processingcircuits 41L and 41R on the logic board of the added bottom layer isconsidered.

Further, in the case of providing two or more logic boards, not alllayers of the logic boards have to be manufactured by using one-shotexposure, and some logic boards may be manufactured by using separateexposure. For example, in the example described above, the logic boardof the bottom layer having the memory units 102L-1 to 102R-2 providedtherein may be manufactured by using separate exposure.

Further, as described above, in the case where the signal processingcircuits are connected in the inside of the logic board, not all layersof the logic boards have to be manufactured by using one-shot exposure,and some layers may be manufactured by using separate exposure.

(Modification of Method of Connecting Signal Processing Circuit)

In addition, the second and third embodiments of the present technologydescribe the example in which the left and right signal processingcircuits are electrically connected in the solid-state imaging device,but they may be connected in the outside of the solid-state imagingdevice.

FIG. 22 illustrates an example in which the signal processing circuit41L and the signal processing circuit 41R of the solid-state imagingdevice 1 are connected, in the outside of the solid-state imaging device1. In addition, in this example, the solid-state imaging device 1 ismounted on the package. Further, in FIG. 22, for clarity ofillustration, only the signal processing circuits 41L and 41R areillustrated in the solid-state imaging device 1.

The signal processing circuit 41L is connected to the conductive pattern412 formed in the package 401 through bonding wire 411L. Similarly, thesignal processing circuit 41R is connected to the conductive pattern 412through bonding wire 411R. Accordingly, the signal processing circuit41L and the signal processing circuit 41R are electrically connectedthrough the bonding wires 411L, 411R and the conductive pattern 412.

In addition thereto, the signal processing circuit 41L and the signalprocessing circuit 41R may be externally electrically connected througha lead frame or the like.

Further, when the signal processing circuit 41L and the signalprocessing circuit 41R are connected, in the outside of the solid-stateimaging device 1, as compared to the case of being internally connected,the number of wirings that can be mounted is limited. Therefore, thecase where it is difficult to synthesize the left and right parts ofpixel data in the solid-state imaging device 1 is assumed. In this case,for example, the analog signals may be shared by connecting signal linesof predetermined same analog signals (e.g., a signal line of a referencevoltage, a ground line, and the like) between the signal processingcircuit 41L and the signal processing circuit 41R.

For example, in the case of generating the left and right parts of pixeldata in the different signal processing circuits 41, differences occurin the color and brightness of the left and right parts of pixel datadue to the difference in the characteristics of the respective signalprocessing circuits 41, and the boundary of the synthetic part of twopieces of pixel data may be seen sometimes. Therefore, sharing apredetermined analog signal of each signal processing circuit 41 enablesreducing the difference in characteristics of each signal processingcircuit 41 and makes the boundary of the synthetic part of pixel datainconspicuous.

(Modification of AD Conversion Method)

Further, although the case of employing a column-parallel AD conversionmethod in the solid-state imaging device has been described above withreference to FIG. 2, a pixel AD parallel conversion method may beemployed.

FIG. 23 schematically illustrates the configurations of a pixelsubstrate 511 and a logic board 512 in the case of employing a pixel ADconversion method.

A pixel circuit 521 including a pixel array unit 531 is formed on thepixel substrate 511, similar to the pixel substrate 11 of FIG. 1.Further, a signal processing circuit 541L and a signal processingcircuit 541R having the same circuit pattern are formed so as to bearranged to the left and right through the scribe region 42, on thelogic board 512, similar to the logic board 12 of FIG. 1.

Then, in the pixel array unit 531 of the pixel substrate 511, pixelunits (groups) are two-dimensionally arranged in a matrix, with a regionincluding a two-dimensional arrangement of pixels of a predeterminednumber as one unit, and a via 532 is formed for each pixel unit.Meanwhile, in the signal processing circuit 541L and the signalprocessing circuit 541R, a circuit unit (in FIG. 23, pixel AD unit)including the AD converter 81 (FIG. 2), the memory unit 67 (FIG. 2), andthe like is provided for each pixel unit of the pixel array unit 531.Further, a via 23 is formed corresponding to the pixel unit, for eachpixel AD unit.

In this manner, since it is possible to speed up the reading speed ofthe pixel signal by employing the pixel parallel AD conversion method,it is possible to lengthen the stop period of the AD converter 81, andas a result, it is possible to reduce power consumption.

(Modification of Moisture-Resistant Ring)

The moisture-resistant ring (also referred to as a seal ring or a guardring or a structure) of the logic board can be basically formed by thesame method as the past method. For example, the moisture-resistant ringis formed by the same method as the general method so as to surroundeach signal processing circuit individually. However, when theinter-circuit wiring layer electrically connecting the signal processingcircuits is formed on the logic board as the second embodiment describedabove with reference to FIG. 14, if the moisture-resistant ring is madeby the same method as in the past, the wiring and the moisture-resistantring of the inter-circuit wiring layer interfere with each other. Inother words, the moisture-resistant ring formed at the end of the signalprocessing circuit and the wiring of the inter-circuit wiring layerinterfere with each other in a portion at which the wiring of theinter-circuit wiring layer passes through the end of the signalprocessing circuit.

Thus, hereinafter, a method of avoiding the interference between thewiring of the inter-circuit wiring layer and the moisture-resistant ringwill be described.

First, a first method of avoiding the interference between the wiring ofthe inter-circuit wiring layer and the moisture-resistant ring will bedescribed with reference to FIG. 24 to FIG. 26.

FIG. 24 is a plan view schematically illustrating a configurationexample of a logic board 601 so as to avoid the interference between thewiring of the inter-circuit wiring layer and the moisture-resistantring.

The logic board 601 is different from the logic board 211 of FIG. 14described above in that a signal processing circuit 611L and a signalprocessing circuit 611R having the same circuit pattern are providedthrough the scribe region 42, instead of the signal processing circuits241L and 241R. Further, the inter-circuit wiring layer electricallyconnecting the signal processing circuit 611L and the signal processingcircuit 611R are formed on the top layer of the logic board 601, similarto the logic board 211. In this example, the signal processing circuit611L and the signal processing circuit 611R are electrically connectedby the wirings 612-1 to 612-3 of the inter-circuit wiring layer.

Further, a moisture-resistant ring 613 is formed so as to surround theouter periphery of the signal processing circuits 611L and 611R alongthe vicinity of the outer periphery of the logic board 601.

Here, the structure of the moisture-resistant ring 613 will be describedwith reference to FIG. 25 and FIG. 26. FIG. 25 is a cross-sectional viewschematically illustrating a cross section of the moisture-resistantring 613, and FIG. 26 is a perspective view schematically illustrating apart of the moisture-resistant ring 613.

The moisture-resistant ring 613 includes a wall 621 made of a materialof a contact, dummy wirings 622-1 to 622-6, walls 623-1 to 623-5 made ofa material of a via, a wall 624, and a dummy wiring 625.

The dummy wirings 622-1 to 622-6 and the dummy wiring 625 arerespectively formed in different wiring layers of the logic board 601,and are not used for signal transfers. In this example, the wiringlayers of the logic board 601 are stacked in seven layers on a substratelayer 631 made of, for example, a silicon substrate. Then, the dummywiring 622-1 is formed on a first wiring layer at the bottom of thelogic board 601. The dummy wirings 622-2 to 622-6 are formed on thesecond to sixth wiring layers of the logic board 601. The dummy wiring625 is formed on a seventh wiring layer at the top of the logic board601.

The dummy wirings 622-1 to 622-6 and the dummy wiring 625 havesubstantially the same rectangular ring-like shape, and are formed so asto surround the outer peripheries of the signal processing circuits 611Land 611R, along the vicinity of the outer periphery of the logic board601, in each wiring layer.

The wall 621, the walls 623-1 to 623-5, and the wall 624 havesubstantially the same rectangular ring-like shape, and are formed so asto surround the outer peripheries of the signal processing circuits 611Land 611R, along the vicinity of the outer periphery of the logic board601.

The wall 621 is formed by the same process as that of a contact forconnecting the substrate layer 631 and the first wiring layer so as toconnect the substrate layer 631 and the dummy wiring 622-1.

The walls 623-1 to 623-5 are formed by the same process as that of a viafor connecting respective wiring layers, from the first wiring layer tothe sixth wiring layer. The wall 623-1 connects the dummy wiring 622-1and the dummy wiring 622-2. The wall 623-2 connects the dummy wiring622-2 and the dummy wiring 622-3. The wall 623-3 connects the dummywiring 622-3 and the dummy wiring 622-4. The wall 623-4 connects thedummy wiring 622-4 and the dummy wiring 622-5. The wall 623-5 connectsthe dummy wiring 622-5 and the dummy wiring 622-6.

The wall 624 is formed by the same process as that of a via forconnecting the sixth wiring layer and the seventh wiring layer, andconnects the dummy wiring 622-6 and the dummy wiring 625.

For example, copper is used for the first wiring layer to the sixthwiring layer, the wall 621 is made of tungsten, and the dummy wirings622-1 to 622-6 and the walls 623-1 to 623-5 are made of copper. Further,an insulating film made of, for example, a low-K material having a lowdielectric constant is used for the interlayer insulation film 632 fromthe surface of the substrate layer 631 to the upper end of the sixthwiring layer. Then, the first to sixth wiring layers are used for thetransmission of high-speed signals, for example.

Meanwhile, for example, aluminum is used for the seventh wiring layer,and the dummy wiring 625 is made of aluminum. Further, the wall 624 ismade of, for example, tungsten. Further, an oxide film (for example, asilicon oxide film) having a higher dielectric constant and waterresistance than those of an interlayer insulation film 632 are used forthe upper end of the sixth wiring layer to the interlayer insulationfilm 633 thereabove. Then, the seventh wiring layer is used for, forexample, the transmission of low-speed signals such as a power supply.Further, the seventh wiring layer is the inter-circuit wiring layer.

In this manner, the moisture-resistant ring 613 forms a wall surroundingthe logic board 601, by the wall 621 to the dummy wiring 625, andprevents infiltration of moisture from the side of the logic board 601to the signal processing circuits 611L and 611R.

Further, the moisture-resistant ring 613 is not provided between thesignal processing circuit 611L and the signal processing circuit 611R.Accordingly, the wirings 612-1 to 612-3 connecting the signal processingcircuit 611L and the signal processing circuit 611R do not interferewith the moisture-resistant ring 613.

In addition, the size of the outer periphery of the moisture-resistantring 613 is substantially the same as that of the pixel circuit 21 andgreater than the exposure range of an exposure apparatus. Accordingly,separate exposure is used during the formation of the layer (includingthe moisture-resistant ring 613) above the substrate layer 631 of thelogic board 601.

Further, the moisture-resistant ring 613 does not necessarily have to beformed so as to surround all of the periphery of the logic board 601,and may be formed so as to surround only a part of the periphery of thelogic board 601, for example, in a range in which the moistureresistance can be ensured.

Further, for example, similar to the case where three or more signalprocessing circuits are disposed on the logic board, themoisture-resistant ring may be formed so as to include all the signalprocessing circuits in the inside or surround the periphery or a part ofthe periphery of the logic board.

Next, a second method for avoiding the interference between the wiringand the moisture-resistant ring of the inter-circuit wiring layer willbe described with reference to FIG. 27 to FIG. 33.

FIG. 27 is a plan view schematically illustrating a configurationexample of a logic board 651 formed so as to avoid the interferencebetween the wiring and the moisture-resistant ring of the inter-circuitwiring layer.

The logic board 651 is different from the logic board 601 of FIG. 24described above in that a signal processing circuits 661L and a signalprocessing circuit 661R having the same circuit pattern are providedthrough the scribe region 42, instead of the signal processing circuits611L and 611R. Further, an inter-circuit wiring layer for electricallyconnecting the signal processing circuit 661L and the signal processingcircuit 661R is formed on the top layer of the logic board 651, similarto the logic board 601. In the example, the signal processing circuit661L and the signal processing circuit 661R are electrically connectedby the wirings 662-1 to 662-3 of the inter-circuit wiring layer.

Further, the logic board 651 is different from the logic board 601 inthat moisture-resistant rings 663L and 663R are formed instead of themoisture-resistant ring 613. The moisture-resistant ring 663L is formedso as to surround the periphery of the signal processing circuit 661L,along the vicinity of the outer periphery of the signal processingcircuit 661L. The moisture-resistant ring 663R is formed so as tosurround the periphery of the signal processing circuit 661R, along thevicinity of the outer periphery of the signal processing circuit 661R.

Here, the structure of the moisture-resistant ring 663R will bedescribed with reference to FIG. 28 to FIG. 33. In addition, althoughthe detailed description is omitted, the moisture-resistant ring 663Lalso has substantially the same structure as that of themoisture-resistant ring 663R. Further, hereinafter, the referencesymbols of the portions of the moisture-resistant ring 663Lcorresponding to the respective portions of the moisture-resistant ring663R are represented by replacing “R” with “L” in the reference symbolsof the respective portions of the moisture-resistant ring 663R.

FIG. 28 is a cross-sectional view schematically illustrating a crosssection of the portions other than the regions A1R-1 to A1R-3 andregions A2R-1 to A2R-3 of the moisture-resistant ring 663R. FIG. 29 is aperspective view schematically illustrating a part of the portions otherthan the regions A1R-1 to A1R-3 and regions A2R-1 to A2R-3 of themoisture-resistant ring 663R.

FIG. 30 is a cross-sectional view schematically illustrating a crosssection of a portion through which the wiring 662-1 of the region A1L-1of the moisture-resistant ring 663L and the region A1R-1 of themoisture-resistant ring 663R passes. FIG. 31 is a perspective viewschematically illustrating the vicinity of the region A1R-1 of themoisture-resistant ring 663R.

FIG. 32 is a cross-sectional view schematically illustrating a crosssection at the same position as that of the portion through which thewiring 662-1 passes in the region A1L-1 of the moisture-resistant ring663L, in the region A2R-1 of the moisture-resistant ring 663R. FIG. 33is a perspective view schematically illustrating the vicinity of theregion A2R-1 of the moisture-resistant ring 663R. In addition, in FIG.33, only a dummy wiring 675R of the top layer is transmitted.

The moisture-resistant ring 663R includes a wall 671R, dummy wirings672R-1 to 672R-6, walls 673R-1 to 673R-5, a wall 674R, and a dummywiring 675R, and has substantially the same structure as that of themoisture-resistant ring 613 described above with reference to FIG. 25and FIG. 26. In other words, the moisture-resistant ring 663R has astacked structure of seven layers, similar to the moisture-resistantring 613, and is made of the same material as that of themoisture-resistant ring 613.

An insulation film made of a low-K material is used for an interlayerinsulation film 682 from the surface of the substrate layer 681 to thetop of the sixth wiring layer, for example, similarly to the interlayerinsulation film 632 of the logic board 601. Further, an oxide film (forexample, a silicon oxide film) is used for an interlayer insulation film683 above the top of the sixth wiring layer, for example, similarly tothe interlayer insulation film 633 of the logic board 601.

However, the moisture-resistant ring 663R is different from themoisture-resistant ring 613, the wall 674R and the dummy wiring 675R arenot formed in some parts, and discontinuous. Specifically, the wall 674Rand the dummy wiring 675R are discontinuous in a part through which thewirings 662-1 to 662-3 in the regions A1R-1 to A1R-3 pass in the leftside of the moisture-resistant ring 663R.

For example, as illustrated in FIG. 30 and FIG. 31, the wall 674R andthe dummy wiring 675R are discontinuous so as not to interfere with thewiring 662-1 in the part through which the wiring 662-1 of the regionA1R-1 passes. Further, without being illustrated, the wall 674R and thedummy wiring 675R are discontinuous so as not to interfere with thewirings 662-2 and 662-3, in the part through which the wiring 662-2 ofthe region A1R-2 passes and the part through which the wiring 662-3 ofthe region A1R-3 passes.

Similarly, the wall 674L of the moisture-resistant ring 663L and thedummy wiring 675L are discontinuous so as not to interfere with thewirings 662-1 to 662-3 in a part through which the wirings 662-1 to662-3 in the regions A1L-1 to A1L-3 pass in the right side of themoisture-resistant ring 663L.

Further, the wall 674R of the moisture-resistant ring 663R isdiscontinuous in a part corresponding to a discontinuous portion of thewall 674L in the regions A1L-1 to A1L-3 of the moisture-resistant ring663L. For example, in the wall 674R, in the region A2R-1 on the rightside of the moisture-resistant ring 663L, the same portion as thediscontinuous portion of the wall 674L in the region A1L-1 on the rightside of the moisture-resistant ring 663L is discontinuous, asillustrated in FIG. 32 and FIG. 33. Further, without being illustrated,in the regions A2R-2 and A2R-3 on the right side of themoisture-resistant ring 663R of the wall 674R, the same portions as thediscontinuous portions of the wall 674L in the regions A1L-2 and A1L-3on the right side of the moisture-resistant ring 663L are discontinuous.

Similarly, in the wall 674L of the moisture-resistant ring 663L, theportions corresponding to the discontinuous portions of the wall 674R inthe regions A1R-1 to A1R-3 of the moisture-resistant ring 663R arediscontinuous.

Thus, the discontinuous portion of the wall 674L of themoisture-resistant ring 663L and the discontinuous portion of the wall674R of the moisture-resistant ring 663R are same, and the wall 674R andthe wall 674L have a shape of the same symmetry.

In addition, the dummy wiring 675R is continuous without interruption inthe regions A2R-1 to A2R-3. Similarly, the dummy wiring 675L iscontinuous without interruption in the regions A2L-1 to A2L-3.

As described above, in the moisture-resistant ring 663R, the wall 671Rto dummy wiring 675R form a wall surrounding the periphery of the signalprocessing circuit 661R so as to prevent infiltration of moisture to thesignal processing circuits 661R from the side of the logic board 651.Similarly, in the moisture-resistant ring 663L, the wall 671L to thedummy wiring 675L form a wall surrounding the periphery of the signalprocessing circuit 661L so as to prevent infiltration of moisture to thesignal processing circuits 661L from the side of the logic board 651.

Further, as described above, the moisture-resistant rings 663L and 663Rdo not interfere with the wirings 662-1 to 662-3 connecting the signalprocessing circuit 661L and the signal processing circuit 661R.

Further, since the discontinuous interval of the wall 674R and the dummywiring 675R of the moisture-resistant ring 663R are very short and thewater resistance of the interlayer insulation film 683 is also high, themoisture performance of moisture-resistant ring 663R is hardlydeteriorated. Similarly, since the discontinuous interval of the wall674L and the dummy wiring 675L of the moisture-resistant ring 663L arevery short and the water resistance of the interlayer insulation film683 is also high, the moisture performance of moisture-resistant ring663L is hardly deteriorated.

Further, since the wall 674L of the moisture-resistant ring 663L and thewall 674R of the moisture-resistant ring 663R have the same shape, thewall 674L and the wall 674R can be exposed by using, for example, thesame photomask, and thus it is possible to reduce costs.

In addition, the moisture-resistant rings 663L and 663R do notnecessarily have to be formed so as to surround all peripheries of thesignal processing circuits 661L and 661R, and may be formed so as tosurround only a part of the peripheries, in a range capable of ensuringthe moisture resistance.

Further, a discontinuous portion of the wall 674L and the wall 674Rother than the portion through which the wirings 662-1 to 662-3 pass isnot necessarily provided. However, if the discontinuous portion is notprovided, the wall 674L and the wall 674R do not have the same shape,and thus it becomes necessary to use separate exposure.

In addition, for example, even when three or more signal processingcircuits are disposed on the logic hoard, it is possible to formmoisture-resistant rings of respective signal processing circuits so asto avoid interference of the wiring connecting respective signalprocessing circuits, in the same manner.

(Manufacturing Method of Moisture-Resistant Rings 663L and 663R)

Next, a manufacturing method of moisture-resistant rings 663L and 663Rof the logic board 651 will be described with reference to FIG. 34 toFIG. 40.

In addition, hereinafter, the left sides of FIG. 34 to FIG. 40 eachschematically illustrates a cross section of a portion at which thewirings 662-1 to 662-3 do not pass, in a portion at which the right sideof the moisture-resistant ring 663L and the left side of themoisture-resistant ring 663R are adjacent. In contrast, the right sidesof FIG. 34 to FIG. 40 each schematically illustrates a cross section ofa portion at which the wiring 662-1 passes, in a portion at which theright side of the moisture-resistant ring 663L and the left side of themoisture-resistant ring 663R are adjacent.

Further, hereinafter, the wall 671L to the dummy wiring 672L-6 of themoisture-resistant ring 663L, the wall 671R to the dummy wiring 672R-6of the moisture-resistant ring 663R, and the interlayer insulation film682 have already been formed, and a step of forming a portion above theinterlayer insulation film 682 will be described. In addition, one-shotexposure is used for the exposure in the processes up to here.

First, as illustrated in FIG. 34, an oxide film 691 is deposited on theinterlayer insulation film 682.

Next, as illustrated in FIG. 35, the oxide film 691 is etched so as toform grooves 692L and 692R. The groove 692L is formed so as tosubstantially overlap the wall 673L-5 through the dummy wiring 672L-6,as viewed from above. However, the groove 692L is intended to form thewall 674L of the moisture-resistant ring 663L, and is not formed in theportion in which the wall 674L described above is discontinuous.Similarly, the groove 692R is formed so as to substantially overlap thewall 673R-5 through the dummy wiring 672R-6, as viewed from above.However, the groove 692R is intended to form the wall 674R of themoisture-resistant ring 663R, and is not formed in the portion in whichthe wall 674R described above is discontinuous.

Further, as described above, since the wall 674R and the wall 674L havethe same shape, the groove 692L and the groove 692R have the same shape.Accordingly, the groove 692L and the groove 692R can be respectivelyformed by using the same photomask, through one-shot exposure.

Further, as illustrated in FIG. 36, a metal film 693 made of tungsten isdeposited on the oxide film 691. In this case, the metal film 693 isdeposited thick such that the grooves 692L and 692R are completelyburied.

Next, as illustrated in FIG. 37, the metal film 693 is left in thegrooves 692L and 692R, and the metal film 693 on the oxide film 691 isremoved by polishing. This allows the walls 674L and 674R made oftungsten to be formed.

Next, as illustrated in FIG. 38, the metal film 694 made of aluminum isdeposited on the oxide film 691.

Next, as illustrated in FIG. 39, the metal film 694 is etched. Thus, theinter-circuit wiring layer including the wirings 662-1 to 662-3 and thedummy wirings 675L and 675R are formed. The separate exposure describedabove is used for forming the inter-circuit wiring layer.

Last, as illustrated in FIG. 40, an oxide film is deposited on theinter-circuit wiring layer. Thus, an interlayer insulation film 683 isformed in conjunction with the oxide film 691 deposited in the processdescribed with reference to FIG. 34. In addition, for example, aprotective film made of polyimide is further formed on the interlayerinsulation film.

In addition, the number and material of layers of the moisture-resistantring and the material of the interlayer insulation film which aredescribed above are an example, and can be changed as necessary.

{4-2. Modification of Imaging Process}

Although the example in which one sheet of pixel data is divided intothe left and right and generated by respective signal processingcircuits has been described above, a method of dividing pixel data maybe freely varied depending on the number or the layout of the signalprocessing circuit provided in the logic board. For example, the pixeldata may be divided vertically, or may be divided into n (n is 3 ormore).

Further, for example, without dividing the pixel data, a plurality of(for example, two) signal processing circuits respectively generateentire pixel data, and pixel data obtained by adding the pixel values ofa plurality of pieces of the generated pixel data may be generated.Thus, it is possible to reduce random noise or absorb the difference inthe characteristics of the AD converter 81, thereby allowing the imagequality to be improved.

In this case, the pixel values of a plurality of pieces of pixel datamay be weighted and added. For example, two signal processing circuitsrespectively generate entire pixel data, and the respective pieces ofpixel data are weighted with a weight of 0.5 and added, such that it ispossible to achieve pixel data, which is an average value of the pixelvalues of the two pieces of entire pixel data.

Further, for example, in addition to dividing the pixel data, the pixeldata of the same region may be generated by a plurality of signalprocessing circuits and added. For example, the left signal processingcircuit and the right signal processing circuit may be respectivelyprovided in duplicate so as to create two pieces of pixel data of theleft half of the subject and two pieces of pixel data of the right halfof the subject. Then, for example, the pixel data obtained by adding thepixel values of two pieces of pixel data of the left half and the pixeldata obtained by adding the pixel values of two pieces of pixel data ofthe right half may be added.

{4-3. Modification of Scope of the Present Technology}

Although the case where the present technology is applied to thesolid-state imaging device has been described, the present technologycan be applied to other semiconductor devices of a stacked structure inwhich the chip size is greater than the exposure range of the exposureapparatus.

5. Electronic Equipment

It is possible to use the solid-state imaging device employing thepresent technology as an imaging unit (i.e., image-capturing unit), ingeneral, an electronic apparatus, such as an imaging device like adigital still camera and a video camera, a portable terminal devicehaving an imaging function, such as a mobile phone, and a copyingmachine using the solid-state imaging device as the image-reading unit.Further, there is also the case in which the above modular form ismounted on the electronic apparatus; in other words, a camera module isused as the imaging device.

{5-1. Imaging Device}

FIG. 41 is a block diagram illustrating a configuration example of animaging device (e.g., camera device) 701 as an example of an electronicapparatus employing the present technology.

As illustrated in FIG. 41, the imaging device 701 includes an opticalsystem including a lens group 711 and the like, an imaging element 712,a DSP circuit 713 which is a camera signal processing unit, a framememory 714, a display device 715, a recording device 716, an operationsystem 717, a power supply system 718, and the like. The DSP circuit713, the frame memory 714, the display device 715, the recording device716, the operation system 717, and the power supply system 718 areconfigured to be connected to each other through a bus line 719.

The lens group 711 receives incident light (i.e., image light) from asubject and focuses the incident light on the imaging plane of theimaging element 712. The imaging element 712 converts the incident lightfocused on the imaging plane by the lens group 711 into an electricalsignal in units of pixels, and outputs a pixel signal.

The display device 715 is a panel-type display device, such as a liquidcrystal display device or an organic electro luminescence (EL) displaydevice, and displays a moving image or a still image captured by theimaging element 712. The recording device 716 records the moving imageor the still image captured by the imaging element 712 in a recordingmedium, such as a memory card, a video tape, or a digital versatile disc(DVD).

The operation system 717 issues operation commands for various functionsof the imaging device 701, under the operation by the user. The powersupply system 718 appropriately supplies various power types, which areoperating power of the DSP circuit 713, the frame memory 714, thedisplay device 715, the recording device 716, and the operation system717, to these supply targets.

Such imaging device 701 is applied to a video camera or a digital stillcamera, and a camera module for a mobile device, such as a smartphoneand a mobile phone. Then, it is possible to use a solid-state imagingdevice according to the embodiments described above as the imagingelement 712, in the imaging device 701. This makes it possible to reducethe cost of the imaging device 701.

In addition, the embodiments of the present technology are not limitedto the embodiments described above, and various modifications can bemade without departing from the scope of the present technology.

Further, for example, the present technology can have the followingconfigurations.

(1)

A solid-state imaging device including:

a first substrate having a pixel circuit including a pixel array unitformed thereon; and

a second substrate having a plurality of signal processing circuitsformed thereon, wherein the plurality of signal processing circuits arearranged adjacent to one another and include a spacing regiontherebetween, and

wherein the first substrate and the second substrate are stacked.

(2)

The solid-state imaging device according to (1), wherein each of thesignal processing circuits have a same set of functions.

(3)

The solid-state imaging device according to any one of (1) to (2),wherein the same set of functions includes operating as a same signalprocessing circuit.

(4)

The solid-state imaging device according to any one of (2) to (3),wherein a function to be enabled and a function to be disabled areconfigured in each of the signal processing circuits in response to oneor more external signals.

(5)

The solid-state imaging device according to any one of (1) to (4),wherein a first signal processing circuit of the plurality of signalprocessing circuits is configured to generate first pixel data based ona pixel signal of a pixel in a first region of the pixel array unit, and

wherein a second signal processing circuit of the plurality of signalprocessing circuits is configured to generate second pixel data based ona pixel signal of a pixel in a second region different from the firstregion of the pixel array unit.

(6)

The solid-state imaging device according to any one of (1) to (5),wherein a first signal processing circuit of the plurality of signalprocessing circuits and a second signal processing circuit of theplurality of signal processing circuits are electrically connected.

(7)

The solid-state imaging device according to (6), wherein the firstsignal processing circuit and the second signal processing circuit areelectrically connected through a first wiring layer formed on the secondsubstrate.

(8)

The solid-state imaging device according to (7), wherein the firstwiring layer is formed on a top layer of a wiring layer of the secondsubstrate.

(9)

The solid-state imaging device according to any one of (7) to (8),further comprising: a first moisture-resistant structure that surroundsat least a part of a periphery of the first signal processing circuit;and a second moisture-resistant structure that surrounds at least a partof a periphery of the second signal processing circuit.

(10)

The solid-state imaging device according to (9), wherein the firstsignal processing circuit and the second signal processing circuit havea common circuit pattern, wherein the first wiring layer is formed onthe top layer of the wiring layer of the second substrate, and includesa top layer of the first moisture-resistant structure and a top layer ofthe second moisture-resistant structure,

wherein the top layer of the first moisture-resistant structure, and afirst wall connecting the top layer of the first moisture-resistantstructure and a layer one below the top layer are not formed at a firstportion through which a wiring of the first wiring layer of the firstmoisture-resistant structure passes, and

wherein the top layer of the second moisture-resistant structure, asecond wall connecting the top layer of the second moisture-resistantstructure, and a layer one below the top layer are not formed at asecond portion through which a wiring of the first wiring layer of thesecond moisture-resistant structure passes.

(11)

The solid-state imaging device according to (10), wherein the first wallis not formed at a third portion of the first moisture-resistantstructure corresponding to the second portion of the secondmoisture-resistant structure, and

wherein the second wall is not formed at a fourth portion of the secondmoisture-resistant structure corresponding to the first portion of thefirst moisture-resistant structure.

(12)

The solid-state imaging device according to (10), wherein a wiring layerexcept for the first wiring layer of the second substrate is formed by aone-shot exposure, and the first wiring layer is formed by a separateexposure.

(13)

The solid-state imaging device according to (10), wherein interlayerinsulation films of second and subsequent wiring layers are made of alow-K film, the second wiring layer being one below the first wiringlayer, and

wherein an interlayer insulation film above the second wiring layer ismade of an insulation film having a water resistance higher than that ofthe low-K film.

(14)

The solid-state imaging device according to (7), further comprising amoisture-resistant structure that surrounds at least a part of aperiphery of the second substrate.

(15)

The solid-state imaging device according to (14), wherein at least aportion of one or more layers of the respective signal processingcircuits are formed by a one-shot exposure, and

wherein a layer having a moisture-resistant structure formed thereon isformed by the separate exposure.

(16)

The solid-state imaging device according to (6), wherein the firstsignal processing circuit and the second signal processing circuit areelectrically connected through a wiring formed on the first substrate.

(17)

The solid-state imaging device according to (16), wherein the wiringformed on the first substrate is formed in an area outside of the pixelarray unit, and

wherein the first signal processing circuit and the second signalprocessing circuit are connected to the wiring formed on the firstsubstrate through a via formed on the first substrate.

(18)

The solid-state imaging device according to (6), wherein the firstsignal processing circuit and the second signal processing circuit areelectrically connected to each other in an area that is external to thesolid-state imaging device.

(19)

The solid-state imaging device according to (18), wherein thesolid-state imaging device is mounted to a package and the first signalprocessing circuit and the second signal processing circuit areelectrically connected through a conductive pattern on the package.

(20)

The solid-state imaging device according to any one of (18) to (19),wherein signal lines of a same analog signal of the first signalprocessing circuit and the second signal processing circuit areelectrically connected, in an area that is external to the solid-stateimaging device.

(21)

The solid-state imaging device according to (6), wherein the firstsignal processing circuit and the second signal processing circuit areelectrically connected to a substrate by one or more bond wires, andwherein the substrate is at least one of provided in the solid-stateimaging device, provided in a same package, and provided outside thepackage.

(22)

The solid-state imaging device according to any one of (6) to (21),wherein the first signal processing circuit is configured to generatefirst pixel data based on a pixel signal of a pixel in a first region ofthe pixel array unit, and supply the generated first pixel data to thesecond signal processing circuit, and

wherein the second signal processing circuit is configured to generatesecond pixel data based on a pixel signal of a pixel in a second regiondifferent from the first region of the pixel array unit, and combine thegenerated second pixel data with the first pixel data.

(23)

The solid-state imaging device according to any one of (6) to (21),wherein the first signal processing circuit is configured to generatefirst pixel data based on a pixel signal of a pixel in a predeterminedregion of the pixel array unit, and supply the generated first pixeldata to the second signal processing circuit, and

wherein the second signal processing circuit is configured to generatesecond pixel data based on a pixel signal of a pixel of the pixel arrayunit in the same region as that of the first signal processing circuit,and generate third pixel data by adding the first pixel data and thesecond pixel data.

(24)

The solid-state imaging device according to any one of (1) to (23),wherein a third substrate is stacked on a surface on an opposite side ofa surface adjacent to the first substrate of the second substrate.

(25)

The solid-state imaging device according to (24), further comprising amemory on the third substrate that is configured to store pixel dataobtained by analog-to-digital converting a pixel signal of each pixel inthe pixel array unit.

(26)

The solid-state imaging device according to any one of claim (1) to(25), further comprising an analog-to-digital (AD) conversion unit onthe second substrate, wherein the AD conversion unit is configured toconvert a pixel signal of each pixel in the pixel array unit in units ofcolumns of the pixel array unit.

(27)

The solid-state imaging device according to any one of (1) to (25),further comprising an analog-to-digital (AD) conversion unit on thesecond substrate, wherein the AD conversion unit is configured toconvert a pixel signal of each pixel in the pixel array unit in units ofregions that include a two-dimensional array of pixels of apredetermined number in the pixel array unit.

(28)

The solid-state imaging device according to any one of (1) to (27),wherein the pixel circuit is formed by a separate exposure, and

wherein at least a portion of one or more layers of respective signalprocessing circuits are formed by a one-shot exposure.

(29)

The solid-state imaging device according to any one of (1) to (28),wherein a first signal processing circuit of the plurality of signalprocessing circuits and a second signal processing circuit of theplurality of signal processing circuits are formed by a same one-shotexposure.

(30)

The solid-state imaging device according to any one of (1) to (29),wherein the spacing region between the plurality of signal processingcircuits is a scribe region.

(31)

A manufacturing method of a solid-state imaging device, including:

forming a pixel circuit including a pixel array unit so as to betwo-dimensionally arranged through a scribe region on a firstsemiconductor substrate, by using one or more separate exposures;

forming a signal processing circuit that processes a pixel signal ofeach pixel in the pixel array unit so as to be two-dimensionallyarranged through a scribe region on a second semiconductor substrate, byusing a one-shot exposure;

stacking the first semiconductor substrate and the second semiconductorsubstrate such that the scribe region of the first semiconductorsubstrate overlaps the scribe region of the second semiconductorsubstrate; and

cutting a semiconductor substrate including the first semiconductorsubstrate and the second semiconductor substrate that are stacked, alongthe scribe region of the first semiconductor substrate.

(32)

The manufacturing method of a solid-state imaging device according to(31), wherein the signal processing circuit includes a first signalprocessing circuit and a second signal processing circuit arrangedadjacent to one another and include the scribe region of the secondsemiconductor substrate therebetween, and wherein a wiring layer thatelectrically connects the first signal processing circuit and the secondsignal processing circuit which are disposed in the same solid-stateimaging device is formed on the second semiconductor substrate.

(33)

The manufacturing method of a solid-state imaging device according to(32), wherein the wiring layer is formed on a top layer of a wiringlayer of the second semiconductor substrate.

(34)

The manufacturing method of a solid-state imaging device according toany one of (32) to (33), further including:

forming a first moisture-resistant structure that surrounds at least apart of a periphery of the first signal processing circuit; and

forming a second moisture-resistant structure that surrounds at least apart of a periphery of the second signal processing circuit.

(35)

The manufacturing method of a solid-state imaging device according toany one of (32) to (33), further including:

forming a moisture-resistant structure that surrounds at least a part ofan outer periphery of the first and second signal processing circuitswhich are disposed on the same solid-state imaging device.

(36)

The manufacturing method of a solid-state imaging device according toany one of (31), wherein the signal processing circuit includes a firstsignal processing circuit and a second signal processing circuitarranged adjacent to one another and include the scribe region of thesecond semiconductor substrate therebetween, and wherein a wiring and avia for electrically connecting the first signal processing circuit andthe second signal processing circuit which are disposed on the samesolid-state imaging device are formed on the first semiconductorsubstrate.

(37)

An electronic apparatus including:

a solid-state imaging device including a first substrate having a pixelcircuit including a pixel array unit formed thereon and a secondsubstrate having a plurality of signal processing circuits formedthereon, wherein the plurality of signal processing circuits arearranged adjacent to one another and include a spacing regiontherebetween, and wherein the first substrate and the second substrateare stacked.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   1 Solid-state imaging device    -   11 Pixel substrate    -   12 Logic board    -   21 Pixel circuit    -   22 Scribe region    -   31 Pixel array unit    -   32 Unit pixel    -   41L, 41R Signal processing circuit    -   42 Scribe region    -   67L, 67R Memory unit    -   68L, 68R Data processing unit    -   69L, 69R Interface unit    -   81L-1 to 81R-n AD converter    -   101L-1 to 101R-2 AD conversion unit    -   102L-1 to 102R-2 Memory unit    -   103L, 103R Logic unit    -   104L-1 to 104R-2 Interface unit    -   105L-1 to 105R-4 Via    -   121 Signal processing LSI    -   171L, 171R Multiplexer    -   172L, 172R Core    -   201 Solid-state imaging device    -   211 Logic board    -   301 Solid-state imaging device    -   311 Pixel substrate    -   312 Logic board    -   321 Pixel circuit    -   331 Pixel array unit    -   341L, 341R Signal processing circuit    -   351L, 351R Wiring    -   352L, 352R, 353L, 353R, 355L, 355R, 357L, 357R Via    -   358 Wiring    -   401 Package    -   411L, 411R Bonding wire    -   412 Conductive pattern    -   511 Pixel substrate    -   512 Logic board    -   521 Pixel circuit    -   531 Pixel array unit    -   532 Via    -   541L, 541R Signal processing circuit    -   601 Logic board    -   611L, 611R Signal processing circuit    -   612-1 to 612-3 Wiring    -   613 Moisture-resistant ring    -   621 Wall    -   622-1 to 622-6 Dummy wiring    -   623-1 to 623-5, 624 Wall    -   625 Dummy wiring    -   631 Substrate layer    -   632, 633 Interlayer insulation film    -   651 Logic board    -   661L, 661R Signal processing circuit    -   662-1 to 662-3 Wiring    -   663L, 663R Moisture-resistant ring    -   671L, 671R Wall    -   672L-1 to 672R-6 Dummy wiring    -   673L-1 to 673R-5, 674L, 674R Wall    -   675L, 675R Dummy wiring    -   681 Substrate layer    -   682, 683 Interlayer insulation film    -   701 Imaging device    -   712 Imaging element

What is claimed is:
 1. A solid-state imaging device including: a firstsubstrate having a pixel circuit including a pixel array unit formedthereon; and a second substrate having a plurality of signal processingcircuits formed thereon, wherein the plurality of signal processingcircuits are arranged adjacent to one another and include a spacingregion therebetween, and wherein the first substrate and the secondsubstrate are stacked.
 2. The solid-state imaging device according toclaim 1, wherein each of the signal processing circuits have a same setof functions.
 3. The solid-state imaging device according to claim 1,wherein the same set of functions includes operating as a same signalprocessing circuit.
 4. The solid-state imaging device according to claim2, wherein a function to be enabled and a function to be disabled areconfigured in each of the signal processing circuits in response to oneor more external signals.
 5. The solid-state imaging device according toclaim 1, wherein a first signal processing circuit of the plurality ofsignal processing circuits is configured to generate first pixel databased on a pixel signal of a pixel in a first region of the pixel arrayunit, and wherein a second signal processing circuit of the plurality ofsignal processing circuits is configured to generate second pixel databased on a pixel signal of a pixel in a second region different from thefirst region of the pixel array unit.
 6. The solid-state imaging deviceaccording to claim 1, wherein a first signal processing circuit of theplurality of signal processing circuits and a second signal processingcircuit of the plurality of signal processing circuits are electricallyconnected.
 7. The solid-state imaging device according to claim 6,wherein the first signal processing circuit and the second signalprocessing circuit are electrically connected through a first wiringlayer formed on the second substrate.
 8. The solid-state imaging deviceaccording to claim 7, wherein the first wiring layer is formed on a toplayer of a wiring layer of the second substrate.
 9. The solid-stateimaging device according to claim 7, further comprising: a firstmoisture-resistant structure that surrounds at least a part of aperiphery of the first signal processing circuit; and a secondmoisture-resistant structure that surrounds at least a part of aperiphery of the second signal processing circuit.
 10. The solid-stateimaging device according to claim 9, wherein the first signal processingcircuit and the second signal processing circuit have a common circuitpattern, wherein the first wiring layer is formed on the top layer ofthe wiring layer of the second substrate, and includes a top layer ofthe first moisture-resistant structure and a top layer of the secondmoisture-resistant structure, wherein the top layer of the firstmoisture-resistant structure, and a first wall connecting the top layerof the first moisture-resistant structure and a layer one below the toplayer are not formed at a first portion through which a wiring of thefirst wiring layer of the first moisture-resistant structure passes, andwherein the top layer of the second moisture-resistant structure, asecond wall connecting the top layer of the second moisture-resistantstructure, and a layer one below the top layer are not formed at asecond portion through which a wiring of the first wiring layer of thesecond moisture-resistant structure passes.
 11. The solid-state imagingdevice according to claim 10, wherein the first wall is not formed at athird portion of the first moisture-resistant structure corresponding tothe second portion of the second moisture-resistant structure, andwherein the second wall is not formed at a fourth portion of the secondmoisture-resistant structure corresponding to the first portion of thefirst moisture-resistant structure.
 12. The solid-state imaging deviceaccording to claim 10, wherein a wiring layer, except for the firstwiring layer of the second substrate, is formed by a one-shot exposure,and the first wiring layer is formed by a separate exposure.
 13. Thesolid-state imaging device according to claim 10, wherein interlayerinsulation films of second and subsequent wiring layers are made of alow-K film, the second wiring layer being one below the first wiringlayer, and wherein an interlayer insulation film above the second wiringlayer is made of an insulation film having a water resistance higherthan that of the low-K film.
 14. The solid-state imaging deviceaccording to claim 7, further comprising a moisture-resistant structurethat surrounds at least a part of a periphery of the second substrate.15. The solid-state imaging device according to claim 14, wherein atleast a portion of one or more layers of the respective signalprocessing circuits are formed by a one-shot exposure, and wherein alayer having a moisture-resistant structure formed thereon is formed bythe separate exposure.
 16. The solid-state imaging device according toclaim 6, wherein the first signal processing circuit and the secondsignal processing circuit are electrically connected through a wiringformed on the first substrate.
 17. The solid-state imaging deviceaccording to claim 16, wherein the wiring formed on the first substrateis formed in an area outside of the pixel array unit, and wherein thefirst signal processing circuit and the second signal processing circuitare connected to the wiring formed on the first substrate through a viaformed on the first substrate.
 18. The solid-state imaging deviceaccording to claim 6, wherein the first signal processing circuit andthe second signal processing circuit are electrically connected to eachother in an area that is external to the solid-state imaging device. 19.The solid-state imaging device according to claim 18, wherein thesolid-state imaging device is mounted to a package and the first signalprocessing circuit and the second signal processing circuit areelectrically connected through a conductive pattern on the package. 20.The solid-state imaging device according to claim 18, wherein signallines of a same analog signal of the first signal processing circuit andthe second signal processing circuit are electrically connected, in anarea that is external to the solid-state imaging device. 21-37.(canceled)